No. |
Part Name |
Description |
Manufacturer |
121 |
K4H640838B-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
122 |
K4H640838B-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
123 |
K4H640838B-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
124 |
K4H640838B-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
125 |
K4H640838B-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
126 |
K4H640838B-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
127 |
K4H641638B-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
128 |
K4H641638B-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
129 |
K4H641638B-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
130 |
K4H641638B-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
131 |
K4H641638B-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
132 |
K4H641638B-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
133 |
K4H643238B-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
134 |
K4H643238B-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
135 |
K4H643238B-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
136 |
K4H643238B-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
137 |
K4H643238B-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
138 |
K4H643238B-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
139 |
LP62S16128B-T |
128K X 16 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
140 |
LP62S16128B-T SERIES |
128K X 16 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
141 |
MAX6319LHUK28B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 2.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
142 |
MAX6319LHUK38B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
143 |
MAX6319LHUK48B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 4.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
144 |
MAX6319MHUK28B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 2.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
145 |
MAX6319MHUK38B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
146 |
MAX6319MHUK48B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 4.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
147 |
MAX6322HPUK28B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 2.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
148 |
MAX6322HPUK38B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
149 |
MAX6322HPUK48B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 4.800V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
150 |
R1112N18B-TL |
Low noise 150mA LDO regulator. Output voltage 1.8V. Active high type. Taping type TL |
Ricoh |
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