| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MAX6328R30-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 122 |
MAX6328R31-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 123 |
MAX6348R33-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 124 |
MAX6348R34-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 125 |
MAX6348R35-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 126 |
MAX6348R36-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 127 |
MAX6348R37-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 128 |
MAX6348R38-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 129 |
MAX6348R39-T |
3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 130 |
MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 131 |
MR18R326GAG0-CM8 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 132 |
MR18R326GAG0-CT9 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 133 |
NAND128R3A0AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 134 |
NAND128R3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 135 |
NAND128R3A0AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 136 |
NAND128R3A0AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 137 |
NAND128R3A0AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 138 |
NAND128R3A0AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 139 |
NAND128R3A0AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 140 |
NAND128R3A0AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 141 |
NAND128R3A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 142 |
NAND128R3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 143 |
NAND128R3A2AV1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 144 |
NAND128R3A2AV6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 145 |
NAND128R3A2AZA1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 146 |
NAND128R3A2AZA6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 147 |
NAND128R3A2AZB1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 148 |
NAND128R3A2AZB6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
| 149 |
PSMN8R3-40YS |
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET |
Nexperia |
| 150 |
PSMN8R3-40YS |
N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET |
NXP Semiconductors |
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