No. |
Part Name |
Description |
Manufacturer |
121 |
3EZ190D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 190 V. 1% tolerance. |
Motorola |
122 |
3EZ190D10 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
123 |
3EZ190D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 190 V. 10% tolerance. |
Motorola |
124 |
3EZ190D2 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
125 |
3EZ190D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 190 V. 2% tolerance. |
Motorola |
126 |
3EZ190D3 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
127 |
3EZ190D4 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
128 |
3EZ190D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 190 V. |
Motorola |
129 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
130 |
5962-9314001HPA |
5962-9314001HPA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
131 |
5962-9314001HPC |
5962-9314001HPC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
132 |
5962-9314001HXA |
5962-9314001HXA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
133 |
5962-9314001HYA |
5962-9314001HYA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
134 |
5962-9314001HYC |
5962-9314001HYC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
135 |
5962-9314001HZA |
5962-9314001HZA · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
136 |
5962-9314001HZC |
5962-9314001HZC · 90 V/1.0 Ohm, Hermetically Sealed, Power MOSFET Optocoupler |
Agilent (Hewlett-Packard) |
137 |
7637 |
T-1 3/4 subminiature, bi-pin lamp. 3.0 volts, 0.190 amps. |
Gilway Technical Lamp |
138 |
8090 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
139 |
8637 |
T-1 3/4 subminiature, miniature flanged lamp. 3.0 volts, 0.190 amps. |
Gilway Technical Lamp |
140 |
87310B |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
141 |
90CLQ100 |
I(f)(av): 90 Amp; V(rrm): 100V; schottky rectifier |
TOSHIBA |
142 |
AA117 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
143 |
AA118 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
144 |
AA3020SYC |
3.0 x 2.0mm SMD chip LED lamp. Super bright yellow (peak wavelength 590 nm). Lens type water clear. |
Kingbright Electronic |
145 |
AA3020SYCK |
3.0 x 2.0mm SMD chip LED lamp. Super bright yellow (peak wavelength 590 nm). Lens type water clear. |
Kingbright Electronic |
146 |
AA3022SYC-4.5SF |
3.0 x 2.2mm single color surface mount LED lamp. Super bright yellow (peak wavelength 590 nm). Lens type water clear. |
Kingbright Electronic |
147 |
AA3022YC-4.5SF |
3.0 x 2.2mm single color surface mount LED lamp. Yellow (peak wavelength 590 nm). Lens type water clear. |
Kingbright Electronic |
148 |
AA3528SYC |
3.5 x 2.8 mm SMD chip LED lamp. Super bright yellow (peak wavelength 590 nm). Lens type water clear. |
Kingbright Electronic |
149 |
AA3528SYCK |
3.5 x 2.8 mm SMD chip LED lamp. Super bright yellow (peak wavelength 590 nm). Lens type water clear. |
Kingbright Electronic |
150 |
AD603-EB |
Low Noise, 90 MHz Variable-Gain Amplifier |
Analog Devices |
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