| No. |
Part Name |
Description |
Manufacturer |
| 121 |
5962L9960703TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 122 |
5962L9960703TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 123 |
5962L9960703TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 124 |
5962L9960703TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 125 |
5962L9960703TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 126 |
5962L9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 127 |
5962L9960704QUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 128 |
5962L9960704QUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 129 |
5962L9960704QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 130 |
5962L9960704QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 131 |
5962L9960704QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 132 |
5962L9960704QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 133 |
5962L9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 134 |
5962L9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 135 |
5962L9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 136 |
5962L9960704TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 137 |
5962L9960704TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 138 |
5962L9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) |
Aeroflex Circuit Technology |
| 139 |
KSM-962LM4Y |
Optic receiver module |
Kodenshi Corp |
| 140 |
KSM-962LM4Y |
Optic receiver module |
Kondenshi Corp |
| 141 |
M57962L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 142 |
M57962L |
HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES |
Mitsubishi Electric Corporation |
| 143 |
M57962L |
HYBRID IC FOR DRIVING IGBT MODULES |
Mitsubishi Electric Corporation |
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