| No. |
Part Name |
Description |
Manufacturer |
| 121 |
12F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 122 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 123 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 124 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 125 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 126 |
150K100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 127 |
150K20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 128 |
150K40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 129 |
150K60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 130 |
150K80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 131 |
150KR100A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 132 |
150KR20A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 133 |
150KR40A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 134 |
150KR60A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 135 |
150KR80A |
High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices |
America Semiconductor |
| 136 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 137 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 138 |
16DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 139 |
16DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) |
TOSHIBA |
| 140 |
16DL2DZ47A |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER LUPPLY APPLICATION) |
TOSHIBA |
| 141 |
16F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 142 |
16F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 143 |
16F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 144 |
16F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 145 |
16F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 146 |
16F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 147 |
16F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 148 |
16F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 149 |
16F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 150 |
16F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| | | |
