| No. |
Part Name |
Description |
Manufacturer |
| 121 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 122 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 123 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 124 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 125 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 126 |
C67076-A2009-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 127 |
C67076-A2010-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 128 |
C67076-A2011-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 129 |
C67076-A2012-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 130 |
C67076-A2013-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 131 |
C67076-A2105-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 132 |
C67076-A2106-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 133 |
C67076-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 134 |
C67076-A2108-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 135 |
C67076-A2109-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 136 |
C67076-A2112-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 137 |
C67076-A2112-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 138 |
C67076-A2300-A70 |
IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) |
Siemens |
| 139 |
C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) |
Siemens |
| 140 |
CA703000 |
V850 Series ANSI-C compiler package CA850 |
NEC |
| 141 |
CHA7010 |
X-band GaInP HBT High Power Amplifier |
United Monolithic Semiconductors |
| 142 |
CHA7010-99F/00 |
X-band GaInP HBT High Power Amplifier |
United Monolithic Semiconductors |
| 143 |
CSA708 |
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS |
Continental Device India Limited |
| 144 |
CSA708O |
0.800W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 145 |
CSA708R |
0.800W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 146 |
CSA708Y |
0.800W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 120 - 240 hFE. |
Continental Device India Limited |
| 147 |
CSA709 |
0.800W Low Frequency PNP Plastic Leaded Transistor. 150V Vceo, 0.700A Ic, 40 - 400 hFE. |
Continental Device India Limited |
| 148 |
CSA709G |
0.800W Low Frequency PNP Plastic Leaded Transistor. 150V Vceo, 0.700A Ic, 200 - 400 hFE. |
Continental Device India Limited |
| 149 |
CSA709O |
0.800W Low Frequency PNP Plastic Leaded Transistor. 150V Vceo, 0.700A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 150 |
CSA709Y |
0.800W Low Frequency PNP Plastic Leaded Transistor. 150V Vceo, 0.700A Ic, 120 - 240 hFE. |
Continental Device India Limited |
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