No. |
Part Name |
Description |
Manufacturer |
121 |
GS72108AJ-8 |
8ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
122 |
GS72108AJ-8I |
8ns 256K x 8 2Mb asynchronous SRAM |
GSI Technology |
123 |
GS72116AJ-8 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
124 |
GS72116AJ-8I |
8ns 128K x 16 2Mb asynchronous SRAM |
GSI Technology |
125 |
GS74104AJ-8 |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
126 |
GS74104AJ-8I |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
127 |
GS74108AJ-8 |
8ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
128 |
GS74108AJ-8I |
8ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
129 |
GS74116AJ-8 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
130 |
GS74116AJ-8I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
131 |
GS74116AJ-8IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
132 |
GS74116AJ-8T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
133 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
134 |
HM514400AJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
135 |
HM514800AJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
136 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
137 |
HM51S4800AJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
138 |
HY534256AJ-80 |
256K x 4-bit CMOS DRAM, 80ns |
Hynix Semiconductor |
139 |
HY62256AJ-85 |
32Kx8bit CMOS SRAM, standby current=1mA, 85ns |
Hynix Semiconductor |
140 |
IP1525AJ-883B |
Regulating Pulse Width Modulator |
SemeLAB |
141 |
IP1526AJ-883B |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
142 |
IP1527AJ-883B |
Regulating Pulse Width Modulator |
SemeLAB |
143 |
KM416V1004AJ-8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
144 |
LC321664AJ-80 |
1MEG (65536words x 16bit) DRAM fast page mode, byte write |
SANYO |
145 |
LM108AJ-8 |
Operational Amplifiers |
National Semiconductor |
146 |
LM108AJ-8/883 |
Operational Amplifiers |
National Semiconductor |
147 |
LM108AJ-8/883 |
Operational Amplifiers |
National Semiconductor |
148 |
LM108AJ-8/883 |
Operational Amplifiers |
National Semiconductor |
149 |
LM108AJ-8/883 |
Operational Amplifiers |
National Semiconductor |
150 |
LM208AJ-8 |
Operational Amplifiers |
National Semiconductor |
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