No. |
Part Name |
Description |
Manufacturer |
121 |
1N5059G |
Diode Switching 200V 2A 2-Pin SOD-57 Ammo |
New Jersey Semiconductor |
122 |
1N5060G |
Diode Switching 400V 2A 2-Pin SOD-57 Ammo |
New Jersey Semiconductor |
123 |
1N540 |
Diode Switching 400V 3A 2-Pin SOD-64 Ammo |
New Jersey Semiconductor |
124 |
1N547 |
Diode Switching 400V 3A 2-Pin SOD-64 Ammo |
New Jersey Semiconductor |
125 |
1N5908 |
Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case CB-429 Ammo |
New Jersey Semiconductor |
126 |
2032E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
127 |
2032VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
128 |
2032VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
129 |
2064VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
130 |
2064VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
131 |
2096E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
132 |
2096VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
133 |
2096VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
134 |
20V8 |
FlashErasable/ReprogrammableCMOSPALDevice |
Cypress |
135 |
2128E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
136 |
2128VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
137 |
2128VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
138 |
2192VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
139 |
240VA |
In-SystemProgrammable3.3VGenericDigitalCrosspointTM |
Lattice Semiconductor |
140 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
141 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
142 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
143 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
144 |
28C256AJC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
145 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
146 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
147 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
148 |
28C256AJI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
149 |
28C256AJI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
150 |
28C256AJI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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