No. |
Part Name |
Description |
Manufacturer |
121 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
122 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
123 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
124 |
C9658 |
MICROCONTROLLER |
Samsung Electronic |
125 |
CARRIER TAPE REELS |
Dimensions |
Samsung Electronic |
126 |
CL10B224 |
Multilayer Ceramic Capacitor |
Samsung Electronic |
127 |
CL21C220 |
Multilayer Ceramic Capacitor |
Samsung Electronic |
128 |
CM-1429 |
P.C.B Circuit Diagram |
Samsung Electronic |
129 |
CM-1829 |
P.C.B Circuit Diagram |
Samsung Electronic |
130 |
CM1419 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
131 |
CM1429 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
132 |
CM1819 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
133 |
CM1829 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
134 |
CM1829-1429 |
P.C.B Circuit Diagram |
Samsung Electronic |
135 |
CMOS DRAM |
EDO Mode, x4 and x8 Device Timing Diagram |
Samsung Electronic |
136 |
CMOS SDRAM |
CMOS SDRAM Device Operations |
Samsung Electronic |
137 |
CW5322X |
SDH104 |
Samsung Electronic |
138 |
DA22497 |
FM FRONT END |
Samsung Electronic |
139 |
DA22497D |
FM FRONT END |
Samsung Electronic |
140 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
141 |
DDRSDRAM1111 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
142 |
DIRECT RDRAM |
Direct RDRAM� Device Operation |
Samsung Electronic |
143 |
DISK TR |
Package dimensions |
Samsung Electronic |
144 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
145 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
146 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
147 |
DS_K4S161622D |
1M x 16 SDRAM |
Samsung Electronic |
148 |
DS_K4S161622E |
1M x 16 SDRAM |
Samsung Electronic |
149 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
150 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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