| No. |
Part Name |
Description |
Manufacturer |
| 121 |
155MBIT/S_SFFTRX |
Components and FTTx solutions - 1550 nm Tx / 1310 nm Rx, ext. Temp. Range; pigtail |
Infineon |
| 122 |
169-14 |
Midget flanged base lens-end lamp. 2.50V, 0.340A, 1000Lux. |
Gilway Technical Lamp |
| 123 |
173-14 |
Midget flanged base lens-end lamp. 3.50V, 0.600A, 12000Lux. |
Gilway Technical Lamp |
| 124 |
173D |
Solid Tantalum Capacitors, Solid Electrolyte Tantalex, Axial Leaded, Molded Case, Standard Range |
Vishay |
| 125 |
174-14 |
Midget flanged base lens-end lamp. 5.00V, 0.170A, 880Lux. |
Gilway Technical Lamp |
| 126 |
179-14 |
Midget flanged base lens-end lamp. 3.50V, 0.750A, 13000Lux. |
Gilway Technical Lamp |
| 127 |
180-14 |
Midget flanged base lens-end lamp. 2.50V, 0.350A, 2100Lux. |
Gilway Technical Lamp |
| 128 |
194D |
Solid Tantalum Chip Capacitors, Conformal, High Reliability, MIDGET® Solid-Electrolyte, New Extended Range, Minimum Size |
Vishay |
| 129 |
1N1095 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 130 |
1N201G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 131 |
1N202G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 132 |
1N203G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 133 |
1N204G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 134 |
1N205G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 135 |
1N206G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 136 |
1N207G |
GENERAL PURPOSE PLASTIC RECTIFIER |
Shanghai Sunrise Electronics |
| 137 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 138 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
| 139 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 140 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 141 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 142 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 143 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 144 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 145 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 146 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 147 |
1N3879 |
Diffused silicon junction rectifier designed for HF range 6A 50V |
Texas Instruments |
| 148 |
1N3879R |
Diffused silicon junction rectifier designed for HF range 6A 50V, reverse polarity |
Texas Instruments |
| 149 |
1N3880 |
Diffused silicon junction rectifier designed for HF range 6A 100V |
Texas Instruments |
| 150 |
1N3880R |
Diffused silicon junction rectifier designed for HF range 6A 100V, reverse polarity |
Texas Instruments |
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