No. |
Part Name |
Description |
Manufacturer |
121 |
HS9-82C37ARH-8 |
Radiation Hardened CMOS High Performance Programmable DMA Controller |
Harris Semiconductor |
122 |
HS9-82C37ARH-8 |
Radiation Hardened CMOS High Performance Programmable DMA Controller |
Intersil |
123 |
HS9-82C37ARH-Q |
Radiation Hardened CMOS High Performance Programmable DMA Controller |
Harris Semiconductor |
124 |
HS9-82C37ARH-Q |
Radiation Hardened CMOS High Performance Programmable DMA Controller |
Intersil |
125 |
HS9-82C37ARH/SAMPLE |
Radiation Hardened CMOS High Performance Programmable DMA Controller |
Harris Semiconductor |
126 |
HS9-OP470ARH |
Radiation Hardened/ Very Low Noise Quad Operational Amplifier |
Intersil |
127 |
HS9-OP470ARH-Q |
Radiation Hardened/ Very Low Noise Quad Operational Amplifier |
Intersil |
128 |
IS-1715ARH |
Complementary Switch FET Driver, Rad-Hard |
Intersil |
129 |
IS-2100ARH |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO |
Intersil |
130 |
ISL705ARH |
Rad-Hard, 5.0V/3.3V �-Processor Supervisory Circuits |
Intersil |
131 |
ISL706ARH |
Rad-Hard, 5.0V/3.3V �-Processor Supervisory Circuits |
Intersil |
132 |
ISL74422ARH |
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers |
Intersil |
133 |
ISL74422ARHF |
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers |
Intersil |
134 |
ISL74422ARHQF |
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers |
Intersil |
135 |
ISL74422ARHVF |
Radiation Hardened 9A/ Non-Inverting Power MOSFET Drivers |
Intersil |
136 |
IXFC52N30P |
PolarHTTM HiPerFET Power MOSFET |
IXYS Corporation |
137 |
IXFN64N50P |
PolarHVTM HiPerFETPower MOSFET |
IXYS Corporation |
138 |
IXTC26N50P |
PolarHV Power MOSFET |
IXYS Corporation |
139 |
IXTK82N25P |
PolarHT Power MOSFET |
IXYS Corporation |
140 |
IXTQ64N25 |
PolarHT Power MOSFET |
IXYS Corporation |
141 |
IXTQ69N30 |
PolarHT Power MOSFET |
IXYS Corporation |
142 |
IXTQ82N25P |
PolarHT Power MOSFET |
IXYS Corporation |
143 |
IXTT82N25P |
PolarHT Power MOSFET |
IXYS Corporation |
144 |
MAX6725KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
145 |
MAX6726KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
146 |
MAX6727KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
147 |
MAX6728KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
148 |
MAX6729KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
149 |
PC8374L_VLA |
3.0 V to 3.6 V, sensor parh super I/O with glue function |
National Semiconductor |
150 |
PCM3793ARHBR |
Very Low-Power Stereo CODEC with HP/Class-D Speaker Amplifier, notch filters, ALC and 3D Effects 32-VQFN -40 to 85 |
Texas Instruments |
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