| No. |
Part Name |
Description |
Manufacturer |
| 121 |
ATF10736 |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 122 |
ATF13786 |
Surface Mount Gallium Arsenide FET for Oscillators |
Agilent (Hewlett-Packard) |
| 123 |
ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 124 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 125 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 126 |
CAY10 |
Gallium arsenide varactor diode |
VALVO |
| 127 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 128 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 129 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 130 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 131 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 132 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 133 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 134 |
CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode |
Clairex Technologies |
| 135 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
| 136 |
CLI800W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 137 |
CLI810W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 138 |
CLI820W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 139 |
CLI830W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 140 |
CLI835W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 141 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 142 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 143 |
CXY10 |
Gallium arsenide varactor diode |
VALVO |
| 144 |
CXY11 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 145 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 146 |
CXY12 |
Gallium Arsenide Multiplier Varactor diode |
Philips |
| 147 |
CXY12 |
Gallium arsenide varactor diode |
VALVO |
| 148 |
CXY13 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 149 |
CXY14 |
Gallium arsenide, Gunn effect, element for the J-Band (Ku-Band) |
VALVO |
| 150 |
CXY22A |
Gallium Arsenide Limiter Diode |
Philips |
| | | |
