| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AS29LV800T-120TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time |
Alliance Semiconductor |
| 122 |
AS29LV800T-70RSC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 123 |
AS29LV800T-70RSI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 124 |
AS29LV800T-70RTC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 125 |
AS29LV800T-70RTI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 126 |
AS29LV800T-80SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 127 |
AS29LV800T-80SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 128 |
AS29LV800T-80TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 129 |
AS29LV800T-80TC |
3V 1M8/512K16 CMOS Flash EEPROM |
Anadigics Inc |
| 130 |
AS29LV800T-80TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 80ns access time |
Alliance Semiconductor |
| 131 |
AS29LV800T-80TI |
3V 1M8/512K16 CMOS Flash EEPROM |
Anadigics Inc |
| 132 |
AS29LV800T-90SC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 133 |
AS29LV800T-90SI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 134 |
AS29LV800T-90TC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 135 |
AS29LV800T-90TI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time |
Alliance Semiconductor |
| 136 |
AS29P200 |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM |
Alliance Semiconductor |
| 137 |
BAS29 |
Small Signal Diode |
Fairchild Semiconductor |
| 138 |
BAS29 |
SURFACE MOUNT SWITCHING DIODES |
Jinan Gude Electronic Device |
| 139 |
BAS29 |
General purpose controlled avalanche (double) diodes |
Nexperia |
| 140 |
BAS29 |
General purpose controlled avalanche (double) diodes |
NXP Semiconductors |
| 141 |
BAS29 |
General purpose controlled avalanche (double) diodes |
Philips |
| 142 |
BAS29_D87Z |
General Purpose High Voltage Diode |
Fairchild Semiconductor |
| 143 |
NX8567SAS291-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.163 nm. Frequency 196.05 THz. FC-UPC connector. |
NEC |
| 144 |
NX8567SAS291-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.163 nm. Frequency 196.05 THz. SC-UPC connector. |
NEC |
| 145 |
NX8567SAS295-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.553 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
| 146 |
NX8567SAS295-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.553 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
| 147 |
NX8567SAS299-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.953 nm. Frequency 195.95 THz. FC-UPC connector. |
NEC |
| 148 |
NX8567SAS299-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.953 nm. Frequency 195.95 THz. SC-UPC connector. |
NEC |
| 149 |
SN74AS298A |
Quadruple 2-Input Multiplexers With Storage |
Texas Instruments |
| 150 |
SN74AS298AD |
Quadruple 2-Input Multiplexers With Storage |
Texas Instruments |
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