No. |
Part Name |
Description |
Manufacturer |
121 |
1N6297 |
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
122 |
1N6297A |
Diode TVS Single Uni-Dir 102V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
123 |
1N6297B |
Diode TVS Single Bi-Dir 97.2V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
124 |
1N6297C |
Diode TVS Single Bi-Dir 97.2V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
125 |
1N6298 |
Diode TVS Single Uni-Dir 105V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
126 |
1N6298A |
Diode TVS Single Uni-Dir 111V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
127 |
1N6299 |
Diode TVS Single Uni-Dir 121V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
128 |
1N6299A |
Diode TVS Single Uni-Dir 128V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
129 |
1N6300 |
Diode TVS Single Uni-Dir 130V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
130 |
1N6301 |
Diode TVS Single Uni-Dir 138V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
131 |
1N6302 |
Diode TVS Single Uni-Dir 146V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
132 |
1N6303 |
Diode TVS Single Uni-Dir 162V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
133 |
1N6303CA |
Diode TVS Single Bi-Dir 154V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
134 |
1N6382 |
Diode TVS Single Bi-Dir 8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
135 |
1N6383 |
Diode TVS Single Bi-Dir 10V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
136 |
1N6384 |
Diode TVS Single Bi-Dir 12V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
137 |
1N6385 |
Diode TVS Single Bi-Dir 15V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
138 |
1N6386 |
Diode TVS Single Bi-Dir 18V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
139 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
140 |
1N6388 |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
141 |
1N6389 |
Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
142 |
1SV258 |
Silicon Epitaxial planar type variable capacitance diode, case 1-1F1A, marking T7 |
TOSHIBA |
143 |
1W005 |
SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
144 |
1W005G |
SINGLE PHASE 1.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
145 |
1W01 |
SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
146 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
147 |
1W01G |
SINGLE PHASE 1.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
148 |
1W02 |
SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
149 |
1W02G |
SINGLE PHASE 1.0 AMP. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
150 |
1W04 |
SINGLE PHASE 1.0 AMP SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
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