| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AUIRF8736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance |
International Rectifier |
| 122 |
AUIRL7736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 112 amperes optimized with low on resistance |
International Rectifier |
| 123 |
AUIRL7736M2TR1 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 112 amperes optimized with low on resistance |
International Rectifier |
| 124 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 125 |
BC170A |
Si-PLANAR-npn TRANSISTOR h21E=β=30...100 at 1mA |
IPRS Baneasa |
| 126 |
BC170B |
Si-PLANAR-npn TRANSISTOR h21E=β=60...250 at 1mA |
IPRS Baneasa |
| 127 |
BC170C |
Si-PLANAR-npn TRANSISTOR h21E=β=150...600 at 1mA |
IPRS Baneasa |
| 128 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 129 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 130 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 131 |
BFW47 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 132 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 133 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 134 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 135 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 136 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 137 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 138 |
BLY38 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
| 139 |
BLY53 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
| 140 |
BLY57 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 141 |
BLY58 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 142 |
BLY87 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 143 |
BLY88 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 144 |
BLY89 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 145 |
BQ24075TRGTR |
1.5A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.2 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 146 |
BQ24075TRGTT |
1.5A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.2 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 147 |
BQ24079RGTR |
1.2A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.1 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 148 |
BQ24079RGTT |
1.2A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.1 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 149 |
E109 |
Orange side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. |
Gilway Technical Lamp |
| 150 |
E110 |
Yellow side viewing LED. Lens translucent. Typ.luminous intensity at 15mA 4.0mcd. Typ. forward voltage at 20mA 2.1V. |
Gilway Technical Lamp |
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