No. |
Part Name |
Description |
Manufacturer |
121 |
74LVC1G18GV-Q100 |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
Nexperia |
122 |
74LVC1G18GV-Q100 |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
NXP Semiconductors |
123 |
74LVC1G18GW |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
Nexperia |
124 |
74LVC1G18GW |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
NXP Semiconductors |
125 |
74LVC1G18GW |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
Philips |
126 |
74LVC1G18GW-Q100 |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
Nexperia |
127 |
74LVC1G18GW-Q100 |
1-of-2 non-inverting demultiplexer with 3-state deselected output |
NXP Semiconductors |
128 |
C30902S |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
129 |
C30921E |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
130 |
C30921S |
Silicon avalanche photoddiode. High speed solid state detector for fiber optic and very low light-level applications |
PerkinElmer Optoelectronics |
131 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
132 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
133 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
134 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
135 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
136 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
137 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
138 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
139 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
140 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
141 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
142 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
143 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
144 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
145 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
146 |
CM300DU-24F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
147 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
148 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
149 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
150 |
CM400HU-24F |
Trench Gate Design Single IGBTMOD�� 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
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