DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for AUDIO F

Datasheets found :: 508
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 2SB459 Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier Hitachi Semiconductor
122 2SB460 Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier Hitachi Semiconductor
123 2SB463 Audio Frequency Transistor TOSHIBA
124 2SB471 Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output Hitachi Semiconductor
125 2SB471 GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT Unknow
126 2SB472 Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output Hitachi Semiconductor
127 2SB472 GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT Unknow
128 2SB536 Audio Frequency power amplifier and low speed switching silicon epitaxial transistor NEC
129 2SB536 Audio Frequency Power Amplifier,Low Speed Switching Unknow
130 2SB537 Audio Frequency power amplifier and low speed switching silicon epitaxial transistor NEC
131 2SB537 Audio Frequency Power Amplifier,Low Speed Switching Unknow
132 2SB539A Audio frequency power amplifier silicon triple diffused MESA transistor NEC
133 2SB539B Audio frequency power amplifier silicon triple diffused MESA transistor NEC
134 2SB539C Audio frequency power amplifier silicon triple diffused MESA transistor NEC
135 2SB54 Audio Frequency Transistor TOSHIBA
136 2SB541 Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor NEC
137 2SB548 Audio Frequency Power Amplifier Unknow
138 2SB56 Audio Frequency Transistor TOSHIBA
139 2SB564A Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. USHA India LTD
140 2SB598 FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS SANYO
141 2SB600 Audio frequency power amplifier silicon triple diffused transistor NEC
142 2SB624 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD NEC
143 2SB624R PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers NEC
144 2SB628 Silicon epitaxial transistor, audio frequency power amplifier and low speed switching NEC
145 2SB66H Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier Hitachi Semiconductor
146 2SB688 Silicon PNP triple diffused audio frequency power transistor, complementary to 2SD718 TOSHIBA
147 2SB73 Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier Hitachi Semiconductor
148 2SB731 Audio Frequency Power Amplifier,Low Speed Switching Unknow
149 2SB736 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) NEC
150 2SB736A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) NEC


Datasheets found :: 508
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



© 2024 - www Datasheet Catalog com