No. |
Part Name |
Description |
Manufacturer |
121 |
DS87C520-QNL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
122 |
DS87C520-WCL |
EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
Dallas Semiconductor |
123 |
E9300B |
E9300B E-Series Average Power Sensor |
Agilent (Hewlett-Packard) |
124 |
E9301B |
E9301B E-Series Average Power Sensor |
Agilent (Hewlett-Packard) |
125 |
EM783-MC3 |
Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM |
NXP Semiconductors |
126 |
EM783-MC6 |
Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM |
NXP Semiconductors |
127 |
EM783-SC |
Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM |
NXP Semiconductors |
128 |
EM783-SP |
Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM |
NXP Semiconductors |
129 |
EM783-TP |
Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM |
NXP Semiconductors |
130 |
ES71145 |
RGB ENCODER |
etc |
131 |
ES71145S |
RGB ENCODER |
etc |
132 |
EVAL-RHF43BV1 |
RHF43B Evaluation board |
ST Microelectronics |
133 |
EVB97C100-10BT |
USB97C100 USB Ethernet Evaluation Board |
etc |
134 |
HA12160 |
PB equalizer, music sensor, Dolby-B NR (PB 1 chip) |
Hitachi Semiconductor |
135 |
HA12163 |
PB equalizer, music sensor, Dolby-B NR (PB 1 chip) |
Hitachi Semiconductor |
136 |
HA12164 |
PB equalizer, music sensor, Dolby-B NR (PB 1 chip) |
Hitachi Semiconductor |
137 |
HA12165 |
PB equalizer, music sensor, Dolby-B NR (PB 1 chip) |
Hitachi Semiconductor |
138 |
HA12166F |
PB equalizer, music sensor, Dolby-B NR (PB 1 chip) |
Hitachi Semiconductor |
139 |
K4H510638E-TC/LA2 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
140 |
K4H510638E-TC/LAA |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
141 |
K4H510638E-TC/LB0 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
142 |
K4H510738E |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
143 |
K4H510738E-TC/LA2 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
144 |
K4H510738E-TC/LAA |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
145 |
K4H510738E-TC/LB0 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
146 |
K4H560438E-TC/LA2 |
DDR SDRAM 256Mb E-die (x4, x8) |
Samsung Electronic |
147 |
K4H560438E-TC/LAA |
DDR SDRAM 256Mb E-die (x4, x8) |
Samsung Electronic |
148 |
K4H560438E-TC/LB0 |
DDR SDRAM 256Mb E-die (x4, x8) |
Samsung Electronic |
149 |
K4H560438E-TC/LB3 |
DDR SDRAM 256Mb E-die (x4, x8) |
Samsung Electronic |
150 |
K4H560838E |
DDR SDRAM 256Mb E-die (x4, x8) |
Samsung Electronic |
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