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Datasheets for B IS

Datasheets found :: 379
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 ADG919BCP Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches Analog Devices
122 ADG919BCP-500RL7 Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Analog Devices
123 ADG919BCP-REEL7 Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Analog Devices
124 ADG919BRM Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Analog Devices
125 ADG919BRM-REEL Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Analog Devices
126 ADG919BRM-REEL7 Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Analog Devices
127 ADG936 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
128 ADG936BCP Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
129 ADG936BCP-500RL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
130 ADG936BCP-R Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
131 ADG936BCP-R-500RL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
132 ADG936BCP-R-REEL Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
133 ADG936BCP-R-REEL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
134 ADG936BCP-REEL Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
135 ADG936BCP-REEL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
136 ADG936BRU Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
137 ADG936BRU-500RL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
138 ADG936BRU-R Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
139 ADG936BRU-R-500RL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
140 ADG936BRU-R-REEL Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
141 ADG936BRU-R-REEL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
142 ADG936BRU-REEL Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
143 ADG936BRU-REEL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
144 AGB3301 The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ... Anadigics Inc
145 BGA416 Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 Infineon
146 BTA12-400 Thyristor TRIAC 400V 125A 3-Pin(3+Tab) TO-220AB Isolated New Jersey Semiconductor
147 BTA12-400AW Thyristor TRIAC 400V 125A 3-Pin(3+Tab) TO-220AB Isolated New Jersey Semiconductor
148 BTA12-400B Thyristor TRIAC 400V 125A 3-Pin(3+Tab) TO-220AB Isolated New Jersey Semiconductor
149 BTA12-400C Thyristor TRIAC 400V 125A 3-Pin(3+Tab) TO-220AB Isolated New Jersey Semiconductor
150 BTA12-700B Thyristor TRIAC 700V 125A 3-Pin(3+Tab) TO-220AB Isolated New Jersey Semiconductor


Datasheets found :: 379
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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