| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N833A |
Silicon Microwave X-band Detector |
Motorola |
| 122 |
1N918 |
Microwave Ku-band Mixer |
Motorola |
| 123 |
1SS110 |
Silicon Epitaxial Planar Diode for Tuner Band Switch |
Hitachi Semiconductor |
| 124 |
1SS110 |
35 V, band switching diode |
Leshan Radio Company |
| 125 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 126 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 127 |
1SS265 |
35 V, band switching diode |
Leshan Radio Company |
| 128 |
1SS268 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 129 |
1SS269 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 130 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 131 |
1SS312 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 132 |
1SS313 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 133 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 134 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 135 |
1SS356 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 136 |
1SS356FH |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 137 |
1SS356FHTW11 |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 138 |
1SS356TW11 |
Band Switching Diode |
ROHM |
| 139 |
1SS364 |
DIODE VHF TUNER BAND SWITCH APPLICATIONS |
TOSHIBA |
| 140 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 141 |
1SS381 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 142 |
1SS390 |
Diodes > High Frequency Diodes > Band switching diodes |
ROHM |
| 143 |
1SS390FH |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 144 |
1SS390FHTE61 |
Band Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 145 |
1SS390TE61 |
Band Switching Diode |
ROHM |
| 146 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 147 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 148 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 149 |
1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 150 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
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