No. |
Part Name |
Description |
Manufacturer |
121 |
BUF08821BIPWPR |
8-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 20-HTSSOP -40 to 95 |
Texas Instruments |
122 |
BUF08832 |
Programmable Gamma-Voltage Generator and High Slew Rate Vcom with Integrated Two-Bank Memory |
Texas Instruments |
123 |
BUF08832AIPWPR |
8-CH Gamma-Voltage Generator and High Slew Rate Vcom with Integrated Two-Bank Memory 20-HTSSOP -40 to 95 |
Texas Instruments |
124 |
BUF12840 |
12 Channel Gamma Buffer with Dual Memory Banks |
Texas Instruments |
125 |
BUF12840AIRGER |
12-CH Gamma Voltage Generator with Dual Memory Banks and EEPROM Access 24-VQFN -40 to 95 |
Texas Instruments |
126 |
BUF12840AIRGET |
12-CH Gamma Voltage Generator with Dual Memory Banks and EEPROM Access 24-VQFN -40 to 95 |
Texas Instruments |
127 |
BUF16821 |
Programmable Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory |
Texas Instruments |
128 |
BUF16821-Q1 |
Automotive, 16-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 28-HTSSOP -40 to 85 |
Texas Instruments |
129 |
BUF16821AIPWPR |
16-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 28-HTSSOP -40 to 85 |
Texas Instruments |
130 |
BUF16821AIPWPRQ1 |
Automotive, 16-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 28-HTSSOP -40 to 85 |
Texas Instruments |
131 |
BUF16821BIPWPR |
16-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 28-HTSSOP -40 to 85 |
Texas Instruments |
132 |
BUF22821 |
22-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 38-HTSSOP -40 to 95 |
Texas Instruments |
133 |
BUF22821AIDCPR |
22-CH Gamma-Voltage Generator and Vcom Calibrator with Integrated Two-Bank Memory 38-HTSSOP -40 to 95 |
Texas Instruments |
134 |
DS1222 |
BankSwitch Chip |
Dallas Semiconductor |
135 |
DS1222 |
BankSwitch Chip |
MAXIM - Dallas Semiconductor |
136 |
DS1222N |
BankSwitch Chip |
Dallas Semiconductor |
137 |
DS1222S |
BankSwitch Chip |
Dallas Semiconductor |
138 |
DS1222SN |
BankSwitch Chip |
Dallas Semiconductor |
139 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
140 |
EBD11ED8ABFB |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
141 |
EBD11ED8ABFB-6B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
142 |
EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
143 |
EBD11ED8ABFB-7B |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words � 72 bits, 2 Banks) |
Elpida Memory |
144 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
145 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
146 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
147 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
148 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
149 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
150 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
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