No. |
Part Name |
Description |
Manufacturer |
121 |
TC55V1664BFT-15 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM |
TOSHIBA |
122 |
TC55V328BFT-12 |
32,768 WORD-8 BIT STATIC RAM |
TOSHIBA |
123 |
TC55V328BFT-15 |
32,768 WORD-8 BIT STATIC RAM |
TOSHIBA |
124 |
TC55V328BFT-15 |
32,768 WORD-8 BIT STATIC RAM |
TOSHIBA |
125 |
TC55V8128BFT-10 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
126 |
TC55V8128BFT-12 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
127 |
TC55V8128BFT-15 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
128 |
TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM |
TOSHIBA |
129 |
TC58NVG1S3BFT00 |
(TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROM |
TOSHIBA |
130 |
TC58NVG1S3BFT00 |
(TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROM |
TOSHIBA |
131 |
TC58V64BFT |
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM |
TOSHIBA |
132 |
TC59S6404BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
133 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
134 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
135 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
136 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
137 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
138 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
139 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
140 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
141 |
TC59S6404BFTL-80 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
142 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
143 |
TC59S6408BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
144 |
TC59S6408BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
145 |
TC59S6408BFT-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
146 |
TC59S6408BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
147 |
TC59S6408BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
148 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
149 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
150 |
TC59S6408BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
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