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Datasheets for BSTR

Datasheets found :: 145
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
121 Microwave Substrates Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications Skyworks Solutions
122 Microwave Substrates Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications Skyworks Solutions
123 PK01(-) Heat sink for BStP15, BStR15, BStR16 series Siemens
124 PK01(-) Heat sink for BStP15, BStR15, BStR16 series Siemens
125 PK12(-) Heat sink for BStP15, BStR15, BStR16 series Siemens
126 PK12(-) Heat sink for BStP15, BStR15, BStR16 series Siemens
127 SC4040BSTR Precision shunt voltage reference Semtech
128 SC4041BSTR Precision shunt voltage reference Semtech
129 SMY51 Si-MOS Field Effect Double transistor P-Channel, with integrated gate protection diodes, source of transistor 2 is connected to substrate RFT
130 TA205XXX TA Series / Power Chip Resisters / Thick Film on Alumina Substrate Ohmite
131 TBA331 5 silicon NPN transistors on a common monolithic substrate SGS-ATES
132 TFPT Linear PTC Surface Mount Chip Thermistors, Nickel barrier with tin/lead wraparound terminations, Alumina substrate base with PTC thin film element, 0603, 0805, and 1206 sizes available Vishay
133 TR, TD High Voltage Resistors and Dividers, Outstanding Stability under Adverse Conditions, Stable Cermet Resistive Element Bonded to a High-Purity Alumina Substrate, Tough Epoxy-based Coating and High Voltage Stability Vishay
134 VSP1900 CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control Texas Instruments
135 VSP1900DBT CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control Texas Instruments
136 VSP1900DBTR CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control Texas Instruments
137 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
138 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
139 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
140 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
141 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
142 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
143 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
144 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
145 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 145
Page: | 1 | 2 | 3 | 4 | 5 |



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