No. |
Part Name |
Description |
Manufacturer |
121 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
122 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
123 |
PK01(-) |
Heat sink for BStP15, BStR15, BStR16 series |
Siemens |
124 |
PK01(-) |
Heat sink for BStP15, BStR15, BStR16 series |
Siemens |
125 |
PK12(-) |
Heat sink for BStP15, BStR15, BStR16 series |
Siemens |
126 |
PK12(-) |
Heat sink for BStP15, BStR15, BStR16 series |
Siemens |
127 |
SC4040BSTR |
Precision shunt voltage reference |
Semtech |
128 |
SC4041BSTR |
Precision shunt voltage reference |
Semtech |
129 |
SMY51 |
Si-MOS Field Effect Double transistor P-Channel, with integrated gate protection diodes, source of transistor 2 is connected to substrate |
RFT |
130 |
TA205XXX |
TA Series / Power Chip Resisters / Thick Film on Alumina Substrate |
Ohmite |
131 |
TBA331 |
5 silicon NPN transistors on a common monolithic substrate |
SGS-ATES |
132 |
TFPT |
Linear PTC Surface Mount Chip Thermistors, Nickel barrier with tin/lead wraparound terminations, Alumina substrate base with PTC thin film element, 0603, 0805, and 1206 sizes available |
Vishay |
133 |
TR, TD |
High Voltage Resistors and Dividers, Outstanding Stability under Adverse Conditions, Stable Cermet Resistive Element Bonded to a High-Purity Alumina Substrate, Tough Epoxy-based Coating and High Voltage Stability |
Vishay |
134 |
VSP1900 |
CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control |
Texas Instruments |
135 |
VSP1900DBT |
CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control |
Texas Instruments |
136 |
VSP1900DBTR |
CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control |
Texas Instruments |
137 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
138 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
139 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
140 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
141 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
142 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
143 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
144 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
145 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |