| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1SMC100A |
Plastic surfase mount zener overvoltage transient suppressor. Reverse stand-off voltage 100V. 1500W peak power, 5.0W steady state. |
Motorola |
| 122 |
1SMC100CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS |
Central Semiconductor |
| 123 |
1ZC100 |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 124 |
1ZC100A |
ZENER DIODE 1W CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES |
TOSHIBA |
| 125 |
20TQC100MD2 |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TQC |
Panasonic |
| 126 |
20TQC100MYF |
Conductive Polymer Tantalum Solid Capacitors (POSCAP) TQC |
Panasonic |
| 127 |
27C1001 |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 128 |
2SC1000 |
Audio Frequency Transistor |
TOSHIBA |
| 129 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 130 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
| 131 |
2SC1001 |
Industrial Transistor Specification Table |
TOSHIBA |
| 132 |
2SC1001 |
Silicon NPN epitaxial planar UHF band power transistor |
TOSHIBA |
| 133 |
2SC1004 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 134 |
2SC1004 |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
| 135 |
2SC1004A |
Audio Frequency Transistor |
TOSHIBA |
| 136 |
2SC1004A |
Silicon NPN triple diffused MESA power transistor, TV vertical output applications |
TOSHIBA |
| 137 |
2SC1008 |
TRANSISTOR NPN |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
| 138 |
2SC1008 |
Medium Power Amplifiers and Switches |
Unknow |
| 139 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 140 |
2SC1008-G |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 141 |
2SC1008-O |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 142 |
2SC1008-R |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 143 |
2SC1008-Y |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 144 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 145 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 146 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 147 |
2SC1009A-L |
Silicon transistor |
NEC |
| 148 |
2SC1009A-T1B |
Silicon transistor |
NEC |
| 149 |
2SC1009A-T2B |
Silicon transistor |
NEC |
| 150 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
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