| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 122 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 123 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 124 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 125 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 126 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 127 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 128 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 129 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 130 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 131 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 132 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 133 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
| 134 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 135 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 136 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 137 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 138 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 139 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 140 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 141 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 142 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 143 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 144 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 145 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 146 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 147 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 148 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 149 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 150 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
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