No. |
Part Name |
Description |
Manufacturer |
121 |
1N5544B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
122 |
1N5544B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
123 |
1N5545B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
124 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
125 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
126 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
127 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
128 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
129 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
130 |
212R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
131 |
2543 |
PROTECTEDQUADPOWERDRIVER |
Allegro MicroSystems |
132 |
2547 |
PROTECTEDQUADPOWERDRIVERS |
Allegro MicroSystems |
133 |
2549 |
PROTECTEDQUADPOWERDRIVER |
Allegro MicroSystems |
134 |
2557 |
PROTECTEDQUADLOW-SIDEDRIVERWITHFAULTDETECTION&SLEEPMODE |
Allegro MicroSystems |
135 |
2559 |
PROTECTEDQUADPOWERDRIVER |
Allegro MicroSystems |
136 |
26R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
137 |
28R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
138 |
293D |
Solid Tantalum Chip Capacitors, Molded, Standard EIA Case Sizings and Ratings, TANTAMOUNT®, Commercial, Surface Mount, Automatic Pick & Place Compatible, Optical Character Recognition Qualified |
Vishay |
139 |
2N2481 |
NPN silicon annular transistor, collector connected to case |
Motorola |
140 |
2N2723 |
Two NPN silicon annular transistors connected as a darlington amplifier |
Motorola |
141 |
2N2724 |
Two NPN silicon annular transistors connected as a darlington amplifier |
Motorola |
142 |
2N2725 |
Two NPN silicon annular transistors connected as a darlington amplifier |
Motorola |
143 |
2N2785 |
Two NPN silicon annular transistors connected as a darlington ampifier |
Motorola |
144 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
145 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
146 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
147 |
2SC3025 |
HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
148 |
2SC3026 |
HIGH VOLTAGE POWER SWITCHING CHARACTER DISPLAY HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
149 |
2SC4538R |
Ratigns and Caracteristics of Fuji Power Transistor |
Fuji Electric |
150 |
2SC4589 |
CTV/Character Display Horizontal Deflection Output |
Hitachi Semiconductor |
| | | |