| No. |
Part Name |
Description |
Manufacturer |
| 121 |
M-BOND 600 |
Strain Gage Adhesive |
Vishay |
| 122 |
MCP6144 |
The MCP6144 is a quad 600nA op amp offering rail to rail input & output over the 1.4 to 5.5V operating range. This amplifier has a typical GBWP of 100kHz with a maximum quiescent current of 1 microampere. |
Microchip |
| 123 |
MCP6144-I/P |
The MCP6144 is a quad 600nA op amp offering rail to rail input & output over the 1.4 to 5.5V operating range. This amplifier ... |
Microchip |
| 124 |
MCP6144-I/SL |
The MCP6144 is a quad 600nA op amp offering rail to rail input & output over the 1.4 to 5.5V operating range. This amplifier ... |
Microchip |
| 125 |
MCP6144-I/ST |
The MCP6144 is a quad 600nA op amp offering rail to rail input & output over the 1.4 to 5.5V operating range. This amplifier ... |
Microchip |
| 126 |
MCP6144T-I/SL |
The MCP6144 is a quad 600nA op amp offering rail to rail input & output over the 1.4 to 5.5V operating range. This amplifier ... |
Microchip |
| 127 |
MCP6144T-I/ST |
The MCP6144 is a quad 600nA op amp offering rail to rail input & output over the 1.4 to 5.5V operating range. This amplifier ... |
Microchip |
| 128 |
MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 129 |
MGFL48V1920 |
1.9-2.0 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 130 |
MGFS48B2122 |
2.11 - 2.17 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 131 |
MGFS48V2527 |
2.7 - 2.5 GHz BAND 60W GaAs FET |
Mitsubishi Electric Corporation |
| 132 |
MKT-J24A |
CERDIP 24 LEAD 600 CENTERS |
National Semiconductor |
| 133 |
MRA0610 |
MICroAMP 3-9-18-40W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data |
TRW |
| 134 |
MRA0610-18 |
MICroAMP 18W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data |
TRW |
| 135 |
MRA0610-3 |
MICroAMP 3W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data |
TRW |
| 136 |
MRA0610-40 |
MICroAMP 40W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data |
TRW |
| 137 |
MRA0610-9 |
MICroAMP 9W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data |
TRW |
| 138 |
PA28F200B5-B60 |
Smart 5 boot block flash memory 2 Mbit. Access speed 60 ns |
Intel |
| 139 |
PA28F200B5-T60 |
Smart 5 boot block flash memory 2 Mbit. Access speed 60 ns |
Intel |
| 140 |
PA28F400B5-B60 |
Smart 5 boot block flash memory 4 Mbit. Access speed 60 ns |
Intel |
| 141 |
PA28F400B5-T60 |
Smart 5 boot block flash memory 4 Mbit. Access speed 60 ns |
Intel |
| 142 |
PB-IRF1010EL |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 143 |
PB-IRF1010ES |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 144 |
PB-IRF1010EZ |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 145 |
PB-IRF1010EZL |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 146 |
PB-IRF1010EZS |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 147 |
PB-IRF7478 |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 148 |
PB-IRFB4215 |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 149 |
PB-IRFIZ24E |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 150 |
PB-IRFIZ24V |
Leaded 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
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