| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 122 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 123 |
2N3904 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 124 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 125 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 126 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 127 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 128 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 129 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 130 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 131 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 132 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 133 |
2N4400 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 134 |
2N4401 |
General Purpose NPN Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 135 |
2N4402 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 136 |
2N4403 |
General Purpose PNP Silicon Switching and amplifyng transistor |
ITT Semiconductors |
| 137 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 138 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 139 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 140 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 141 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 142 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 143 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 144 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 145 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 146 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 147 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 148 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 149 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 150 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
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