| No. |
Part Name |
Description |
Manufacturer |
| 121 |
IP3843D-8 |
Current Mode Regulating Pulse Width Modulator |
SemeLAB |
| 122 |
IP3844D-8 |
Current Mode Regulating Pulse Width Modulator |
SemeLAB |
| 123 |
IP3845D-8 |
Current Mode Regulating Pulse Width Modulator |
SemeLAB |
| 124 |
IS61LF25632D-8.5B |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 125 |
IS61LF25632D-8.5TQ |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 126 |
IS61LF25632D-8.5TQI |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 127 |
IS61LF25636D-8.5B |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 128 |
IS61LF25636D-8.5TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 129 |
IS61LF25636D-8.5TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 130 |
IS61LF51218D-8.5B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 131 |
IS61LF51218D-8.5TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 132 |
IS61LF51218D-8.5TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 133 |
IS61SF25632D-8.5B |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 134 |
IS61SF25632D-8.5TQ |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 135 |
IS61SF25632D-8.5TQI |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 136 |
IS61SF25632D-8B |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 137 |
IS61SF25632D-8TQ |
256K x 32 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 138 |
IS61SF25636D-8.5B |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 139 |
IS61SF25636D-8.5TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 140 |
IS61SF25636D-8.5TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 141 |
IS61SF25636D-8B |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 142 |
IS61SF25636D-8TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 143 |
IS61SF51218D-8.5B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 144 |
IS61SF51218D-8.5TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 145 |
IS61SF51218D-8.5TQI |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 146 |
IS61SF51218D-8B |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 147 |
IS61SF51218D-8TQ |
512K x 18 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 148 |
KM44C256D-8 |
60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 149 |
LH2108AD/883B |
Precision Operational Amplifier, Mil-Std-883, level B processing |
Raytheon |
| 150 |
LH5164AD-80L |
CMOS 64K (8K x 8)static RAM |
SHARP |
| | | |
