| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N4133C |
500mW low noise silicon zener diode. Nominal zener voltage 87V. 2% tolerance. |
Jinan Gude Electronic Device |
| 122 |
1N4133D |
500mW low noise silicon zener diode. Nominal zener voltage 87V. 1% tolerance. |
Jinan Gude Electronic Device |
| 123 |
1N4134C |
500mW low noise silicon zener diode. Nominal zener voltage 91V. 2% tolerance. |
Jinan Gude Electronic Device |
| 124 |
1N4134D |
500mW low noise silicon zener diode. Nominal zener voltage 91V. 1% tolerance. |
Jinan Gude Electronic Device |
| 125 |
1N4135C |
500mW low noise silicon zener diode. Nominal zener voltage 100V. 2% tolerance. |
Jinan Gude Electronic Device |
| 126 |
1N4135D |
500mW low noise silicon zener diode. Nominal zener voltage 100V. 1% tolerance. |
Jinan Gude Electronic Device |
| 127 |
1N4148 |
Silicon epitaxial planar type diode. |
Panasonic |
| 128 |
1N4149 |
Silicon epitaxial planar type diode. |
Panasonic |
| 129 |
1N4150 |
Silicon epitaxial planar type diode. |
Panasonic |
| 130 |
1N4151 |
Silicon epitaxial planar switching diode. Electrically it resembles the 1N3604 |
AEG-TELEFUNKEN |
| 131 |
1N4151 |
Silicon epitaxial planar type diode. |
Panasonic |
| 132 |
1N4152 |
Silicon epitaxial planar type diode. |
Panasonic |
| 133 |
1N4153 |
Silicon epitaxial planar type diode. |
Panasonic |
| 134 |
1N4154 |
Silicon epitaxial planar switching diode. Electrically the diode resembles 1N4009 |
AEG-TELEFUNKEN |
| 135 |
1N4154 |
Silicon epitaxial planar type diode. |
Panasonic |
| 136 |
1N4370 |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
Jinan Gude Electronic Device |
| 137 |
1N4370A |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 138 |
1N4370C |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 139 |
1N4370D |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 140 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 141 |
1N4371C |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 142 |
1N4371D |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 143 |
1N4372A |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 144 |
1N4372C |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 145 |
1N4372D |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 146 |
1N4446 |
Silicon epitaxial planar type diode. |
Panasonic |
| 147 |
1N4447 |
Silicon epitaxial planar type diode. |
Panasonic |
| 148 |
1N4448 |
Silicon epitaxial planar type diode. |
Panasonic |
| 149 |
1N4449 |
High conductance ultra fast switching diode. Working inverse voltage 75 V. |
Fairchild Semiconductor |
| 150 |
1N4449 |
Silicon epitaxial planar type diode. |
Panasonic |
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