No. |
Part Name |
Description |
Manufacturer |
121 |
HEDT-9101 |
HEDT-9101#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules |
Agilent (Hewlett-Packard) |
122 |
HEDT-9140 |
HEDT-9140#I00 · High Temperature 140 degrees C Three Channel Optical Incremental Encoder Modules |
Agilent (Hewlett-Packard) |
123 |
HEDT-9141 |
HEDT-9141#I00 · High Temperature 140 degrees C Three Channel Optical Incremental Encoder Modules |
Agilent (Hewlett-Packard) |
124 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
125 |
HSH2501NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
126 |
HSH2510NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
127 |
HY17-12 |
90 Degree Hybrid 1.71�1.88 GHz |
Alpha Industries Inc |
128 |
HY17-12 |
90 Degree Hybrid 1.71-1.88 GHz |
Skyworks Solutions |
129 |
HY19-12 |
90 Degree Hybrid 1.85�1.99 GHz |
Alpha Industries Inc |
130 |
HY19-12 |
90 Degree Hybrid 1.85-1.99 GHz |
Skyworks Solutions |
131 |
HY22-73 |
90 Degree Hybrid 2.1�2.3 GHz |
Alpha Industries Inc |
132 |
HY22-73 |
90 Degree Hybrid 2.1-2.3 GHz |
Skyworks Solutions |
133 |
HY86-12 |
90 Degree Hybrid 0.82�0.90 GHz |
Alpha Industries Inc |
134 |
HY86-12 |
90 Degree Hybrid 0.82-0.90 GHz |
Skyworks Solutions |
135 |
HY92-12 |
90 Degree Hybrid 0.88�0.96 GHz |
Alpha Industries Inc |
136 |
HY92-12 |
90 Degree Hybrid 0.88-0.96 GHz |
Skyworks Solutions |
137 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
138 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
139 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
140 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
141 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
142 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
143 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
144 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
145 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
146 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
147 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
148 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
149 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
150 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
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