| No. |
Part Name |
Description |
Manufacturer |
| 121 |
ECG055C-PCB |
The Communications Edge |
WJ Communications |
| 122 |
ENA1635 |
Schottky Barrier Diode 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common |
ON Semiconductor |
| 123 |
EVALCOMMBOARD |
Communication/ control board based on ST72F651AR6 microcontroller for power line communication and industrial products |
ST Microelectronics |
| 124 |
EVALKITST7590-Q1 |
STarGRID ST7590 SoC PRIME power line communication development kit |
ST Microelectronics |
| 125 |
EVALST7590T-2 |
STarGRID ST7590T SoC PRIME-certified power line communication development kit |
ST Microelectronics |
| 126 |
F10P40FR |
FRD DUAL DIODES - ANODE COMMON |
Nihon |
| 127 |
FC807 |
High-Speed Switching Composite Diode Anode Common |
SANYO |
| 128 |
FC808 |
High-Speed Switching Composite Diode Cathode Common |
SANYO |
| 129 |
FCQ10A03L |
SBD DUAL DIODES - CATHODE COMMON |
Nihon |
| 130 |
FCQ20A03L |
SBD DUAL DIODES - CATHODE COMMON |
Nihon |
| 131 |
FCQ20A03L |
SBD DUAL DIODES - CATHODE COMMON |
Nihon |
| 132 |
FCQ20B06 |
SBD DUAL DIODES - CATHODE COMMON |
Nihon |
| 133 |
FDD3672_NL |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package |
Fairchild Semiconductor |
| 134 |
FDP3682_NL |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package |
Fairchild Semiconductor |
| 135 |
FDS2582 |
Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package |
Fairchild Semiconductor |
| 136 |
FDS3672_NL |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package |
Fairchild Semiconductor |
| 137 |
FDS3692 |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package |
Fairchild Semiconductor |
| 138 |
FDS3992_NL |
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package |
Fairchild Semiconductor |
| 139 |
FGC1500A-130DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 140 |
FGC3500AX-120DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 141 |
FGC4000BX-90DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 142 |
FGC6000AX-120DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 143 |
FGC800A-130DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 144 |
FGR4000BX-90DS |
Gate communitated turn-off thyristor for high power inverter use press pack type |
Mitsubishi Electric Corporation |
| 145 |
FLLD258 |
SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR |
Zetex Semiconductors |
| 146 |
FLLD263 |
SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR |
Zetex Semiconductors |
| 147 |
FW82801E |
Intel 82801E Communications I/O Controller Hub (C-ICH) |
Intel |
| 148 |
GCU08AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
| 149 |
GCU08AA-130 |
GATE COMMUTATED TURN-OFF THYRISTOR UNIT HIGH POWER INVERTER USE |
Powerex Power Semiconductors |
| 150 |
GCU15AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units |
Mitsubishi Electric Corporation |
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