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Datasheets found :: 10400
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No. Part Name Description Manufacturer
121 1SS393 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
122 1SS394 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
123 1SS395 Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application TOSHIBA
124 1SS396 Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching TOSHIBA
125 1SS397 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
126 1SS398 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
127 1SS399 Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications TOSHIBA
128 1SS401 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
129 1SS402 Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications TOSHIBA
130 1SS403 Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching Applications TOSHIBA
131 1SS404 Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications TOSHIBA
132 2017 28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid Micropac Industries
133 2017 28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid Micropac Industries
134 2032 28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid Micropac Industries
135 2032 28 and 48W true hermetically sealed proportionally controlled metal package heater hybrid Micropac Industries
136 21050 21050 PCI-to-PCI Bridge Hardware Implementation Application Note Intel
137 288 Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. Gilway Technical Lamp
138 2N1893 GENERAL PURPOSE HIGH-VOLTAGE TYPE SGS Thomson Microelectronics
139 2N3791 Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. General Electric Solid State
140 2N3792 Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. General Electric Solid State
141 2N5334 3 Apere High-speed NPN silicon 6W power transistor Motorola
142 2N5335 3 Apere High-speed NPN silicon 6W power transistor Motorola
143 2N5400 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
144 2N5401 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
145 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
146 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
147 2N5608 Bipolar NPN Device Hermetically sealed TO66 Metal Package SemeLAB
148 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
149 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
150 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State


Datasheets found :: 10400
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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