No. |
Part Name |
Description |
Manufacturer |
121 |
BY187 |
Silicon E.H.T. Rectifier Diode, intended for tripler circuits |
Philips |
122 |
BYX13-1000 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
123 |
BYX13-1000R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
124 |
BYX13-1200 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
125 |
BYX13-1200R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
126 |
BYX13-800 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
127 |
BYX13-800R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
128 |
BYX13-SERIES |
Silicon Rectifier Diode, intended for power rectifier applications |
Philips |
129 |
BYX35 |
Silicon High Voltage Diode, intended for the high voltage power supply of X-ray, electron microscope and LASER equipment |
Philips |
130 |
CAT522 |
Dual 8-Bit DPP, Buffered Wiper and 3-Wire Serial Interface, Independent Pot Terminals for Programmable Voltage Applications |
Catalyst Semiconductor |
131 |
CAT525 |
Quad 8-Bit DPP, Buffered Wiper and 3-Wire Serial Interface, Independent Pot Terminals for Programmable Voltage Applications |
Catalyst Semiconductor |
132 |
CD54AC240F3A |
Octal Buffer/Line Driver Three-State, Inverting |
Intersil |
133 |
CD54ACT240F3A |
Octal Buffer/Line Driver Three-State, Inverting |
Intersil |
134 |
CM10MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
135 |
CM10MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
136 |
CM15MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
137 |
CM15MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
138 |
CM20MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
139 |
CM20MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
140 |
CM30MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
141 |
CM30MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
142 |
CM50MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
143 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
144 |
CR |
Chip, Flow Solderable, Custom Sizes Available, Burn-in Data Available, Automatic Placement Capability, Top and Wraparound Terminations, Tape and Reel Packaging Available, Internationally Standardized Sizes |
Vishay |
145 |
CRA06P |
Thick Film Resistor Array, 8 terminal package with 4 isolated resistors, Automatic placement capability, Flow solderable, Inner electrode protection, Thick film resistance element |
Vishay |
146 |
CRHV |
Chip, Flow Solderable, Custom Sizes Available, Automatic Placement Capability, Top and Wraparound Terminations, Tape and Reel Packaging Available, Internationally Standardized Sizes |
Vishay |
147 |
CS5124 |
High Performance, Integrated Current Mode PWM Controllers |
Cherry Semiconductor |
148 |
CS5124 |
High Performance, Integrated Current Mode PWM Controllers |
ON Semiconductor |
149 |
CS5124 |
High Performance, Integrated Current Mode PWM Controllers |
ON Semiconductor |
150 |
CS5124-D |
High Performance, Integrated Current Mode PWM Controllers |
ON Semiconductor |
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