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Datasheets for E, I

Datasheets found :: 800
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No. Part Name Description Manufacturer
121 BY187 Silicon E.H.T. Rectifier Diode, intended for tripler circuits Philips
122 BYX13-1000 Silicon Rectifier Diode, intended for power rectifier applications, normal polarity Philips
123 BYX13-1000R Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity Philips
124 BYX13-1200 Silicon Rectifier Diode, intended for power rectifier applications, normal polarity Philips
125 BYX13-1200R Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity Philips
126 BYX13-800 Silicon Rectifier Diode, intended for power rectifier applications, normal polarity Philips
127 BYX13-800R Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity Philips
128 BYX13-SERIES Silicon Rectifier Diode, intended for power rectifier applications Philips
129 BYX35 Silicon High Voltage Diode, intended for the high voltage power supply of X-ray, electron microscope and LASER equipment Philips
130 CAT522 Dual 8-Bit DPP, Buffered Wiper and 3-Wire Serial Interface, Independent Pot Terminals for Programmable Voltage Applications Catalyst Semiconductor
131 CAT525 Quad 8-Bit DPP, Buffered Wiper and 3-Wire Serial Interface, Independent Pot Terminals for Programmable Voltage Applications Catalyst Semiconductor
132 CD54AC240F3A Octal Buffer/Line Driver Three-State, Inverting Intersil
133 CD54ACT240F3A Octal Buffer/Line Driver Three-State, Inverting Intersil
134 CM10MD1-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
135 CM10MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
136 CM15MD1-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
137 CM15MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
138 CM20MD1-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
139 CM20MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
140 CM30MD1-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
141 CM30MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
142 CM50MD1-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
143 CQY10 Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices AEG-TELEFUNKEN
144 CR Chip, Flow Solderable, Custom Sizes Available, Burn-in Data Available, Automatic Placement Capability, Top and Wraparound Terminations, Tape and Reel Packaging Available, Internationally Standardized Sizes Vishay
145 CRA06P Thick Film Resistor Array, 8 terminal package with 4 isolated resistors, Automatic placement capability, Flow solderable, Inner electrode protection, Thick film resistance element Vishay
146 CRHV Chip, Flow Solderable, Custom Sizes Available, Automatic Placement Capability, Top and Wraparound Terminations, Tape and Reel Packaging Available, Internationally Standardized Sizes Vishay
147 CS5124 High Performance, Integrated Current Mode PWM Controllers Cherry Semiconductor
148 CS5124 High Performance, Integrated Current Mode PWM Controllers ON Semiconductor
149 CS5124 High Performance, Integrated Current Mode PWM Controllers ON Semiconductor
150 CS5124-D High Performance, Integrated Current Mode PWM Controllers ON Semiconductor


Datasheets found :: 800
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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