| No. |
Part Name |
Description |
Manufacturer |
| 121 |
CXK77P36E160GB-43AE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 122 |
CXK77P36E160GB-43BE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 123 |
CXK77P36E160GB-43E |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 124 |
CXK77P36E160GB-44E |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 125 |
CXK77P36E160GB-4AE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 126 |
CXK77P36E160GB-4BE |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 127 |
CXK77P36E160GB-4E |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) |
SONY |
| 128 |
E160 |
Yellow T-1 3/4 flashing LED. Lens diffused. Luminous intensity at 9.0VDC: 5mcd(min), 32mcd(max). Forward voltage : 3.5VDC(min), 12.0VDC(typ), 13.0VDC(max). |
Gilway Technical Lamp |
| 129 |
E160D |
2 expanders with 4 inputs each, possibly equivalent SN8460N |
RFT |
| 130 |
EV-VND5E160AJ |
VND5E160AJ Evaluation Board |
ST Microelectronics |
| 131 |
EV-VND5E160AJ |
VND5E160AJ Evaluation Board |
ST Microelectronics |
| 132 |
EV-VND5E160J |
VND5E160J Evaluation Board |
ST Microelectronics |
| 133 |
EV-VND5E160J |
VND5E160J Evaluation Board |
ST Microelectronics |
| 134 |
EV-VNQ5E160AK |
VNQ5E160AK Evaluation Board |
ST Microelectronics |
| 135 |
EV-VNQ5E160AK |
VNQ5E160AK Evaluation Board |
ST Microelectronics |
| 136 |
EV-VNQ5E160K |
VNQ5E160K Evaluation Board |
ST Microelectronics |
| 137 |
EV-VNQ5E160K |
VNQ5E160K Evaluation Board |
ST Microelectronics |
| 138 |
FRE160D |
41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 139 |
FRE160H |
41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 140 |
FRE160R |
41A/ 100V/ 0.050 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 141 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 142 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 143 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 144 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 145 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 146 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 147 |
K4E160811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 148 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 149 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 150 |
K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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