| No. |
Part Name |
Description |
Manufacturer |
| 121 |
DS28E17 |
1-Wire®-to-I2C Master Bridge |
MAXIM - Dallas Semiconductor |
| 122 |
DS28E17K |
Evaluation System for DS28E17 |
MAXIM - Dallas Semiconductor |
| 123 |
DS28E17K |
Evaluation System for DS28E17 |
MAXIM - Dallas Semiconductor |
| 124 |
DS28E17K# |
Evaluation System for DS28E17 |
MAXIM - Dallas Semiconductor |
| 125 |
DS28E17K# |
Evaluation System for DS28E17 |
MAXIM - Dallas Semiconductor |
| 126 |
DS28E17Q+ |
1-Wire®-to-I2C Master Bridge |
MAXIM - Dallas Semiconductor |
| 127 |
DS28E17Q+T |
1-Wire®-to-I2C Master Bridge |
MAXIM - Dallas Semiconductor |
| 128 |
E170 |
Red GaAlAs, T-1, ultra bright LED. Lens clear. Luminous intensity at 20mA: 500mcd(min), 700mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.50V(max). |
Gilway Technical Lamp |
| 129 |
E171 |
Red GaAlAs, T-1, ultra bright LED. Lens clear. Luminous intensity at 20mA: 700mcd(min), 1000mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.50V(max). |
Gilway Technical Lamp |
| 130 |
E172D |
J-K Master-Slave Flip-Flop, possibly equivalent SN8472N |
RFT |
| 131 |
E174D |
2 edge-triggered D flip-flop, possibly equivalent SN8474N |
RFT |
| 132 |
E175D |
Quad memory flip-flop, possibly equivalent SN8475N |
RFT |
| 133 |
E176 |
T-3 1/4 Jumbo LEDs (10mm) |
Gilway Technical Lamp |
| 134 |
E177 |
T-3 1/4 Jumbo LEDs (10mm) |
Gilway Technical Lamp |
| 135 |
E178 |
T-3 1/4 Jumbo LEDs (10mm) |
Gilway Technical Lamp |
| 136 |
E179 |
T-3 1/4 Jumbo LEDs (10mm) |
Gilway Technical Lamp |
| 137 |
K4E170411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 138 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 139 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 140 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 141 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 142 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 143 |
K4E170811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 144 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 145 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 146 |
K4E170812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 147 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 148 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 149 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 150 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
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