No. |
Part Name |
Description |
Manufacturer |
121 |
RV5VG101D-E1 |
RECHARGEABLE LITHIUM-ION CELL PROTECTORS |
Ricoh |
122 |
RV5VG101D-E2 |
RECHARGEABLE LITHIUM-ION CELL PROTECTORS |
Ricoh |
123 |
RV5VG1XXX SERIES |
Rechargeable Lithium-Ion Cell Protectors |
Ricoh |
124 |
S3526B |
Single Frequency Tuneable Bandpass / Notch Filter / Tone Generator |
AMI Semiconductor |
125 |
SGA-0163 |
DC-4500 MHz, 2.1V silicon germanium cascadeable gain block |
Stanford Microdevices |
126 |
SGA-0363 |
DC-5000 MHz, 2.5V silicon germanium cascadeable gain block |
Stanford Microdevices |
127 |
SGA-1163 |
DC-6000 MHz, 4.6V silicon germanium cascadeable gain block |
Stanford Microdevices |
128 |
SGA-1263 |
DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block |
Stanford Microdevices |
129 |
SGA-2363 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. |
Stanford Microdevices |
130 |
SGA-2386 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. |
Stanford Microdevices |
131 |
SGA-3563 |
DC-5000 MHz, 3.2V, silicon germanium cascadeable gain block |
Stanford Microdevices |
132 |
SGA-3586 |
DC-5000 MHz, 3.5V, silicon germanium cascadeable gain block |
Stanford Microdevices |
133 |
SGA-4563 |
DC-2500 MHz. 3.5V silicon germanium cascdeable gain block. |
Stanford Microdevices |
134 |
SGA-4586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz |
Stanford Microdevices |
135 |
SGA-5263 |
DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz |
Stanford Microdevices |
136 |
SGA-5286 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz |
Stanford Microdevices |
137 |
SGA-5289 |
DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz |
Stanford Microdevices |
138 |
SGA-5386 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz |
Stanford Microdevices |
139 |
SGA-5389 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz |
Stanford Microdevices |
140 |
SGA-5486 |
DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
141 |
SGA-5489 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz |
Stanford Microdevices |
142 |
SGA-5586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
143 |
SGA-5589 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |
Stanford Microdevices |
144 |
SGA-6586 |
DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz |
Stanford Microdevices |
145 |
SGA-6589 |
DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
Stanford Microdevices |
146 |
SGA-7489 |
DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. |
Stanford Microdevices |
147 |
THS9001 |
50-MHz to 350-MHz Cascadeable Amplifier |
Texas Instruments |
148 |
THS9001DBVR |
50-MHz to 350-MHz Cascadeable Amplifier |
Texas Instruments |
149 |
THS9001DBVT |
50-MHz to 350-MHz Cascadeable Amplifier |
Texas Instruments |
150 |
VL1220 |
Coin type rechargeable lithium batteries (VL series) |
Panasonic |
| | | |