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Datasheets for EABLE

Datasheets found :: 155
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
121 RV5VG101D-E1 RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
122 RV5VG101D-E2 RECHARGEABLE LITHIUM-ION CELL PROTECTORS Ricoh
123 RV5VG1XXX SERIES Rechargeable Lithium-Ion Cell Protectors Ricoh
124 S3526B Single Frequency Tuneable Bandpass / Notch Filter / Tone Generator AMI Semiconductor
125 SGA-0163 DC-4500 MHz, 2.1V silicon germanium cascadeable gain block Stanford Microdevices
126 SGA-0363 DC-5000 MHz, 2.5V silicon germanium cascadeable gain block Stanford Microdevices
127 SGA-1163 DC-6000 MHz, 4.6V silicon germanium cascadeable gain block Stanford Microdevices
128 SGA-1263 DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block Stanford Microdevices
129 SGA-2363 DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. Stanford Microdevices
130 SGA-2386 DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. Stanford Microdevices
131 SGA-3563 DC-5000 MHz, 3.2V, silicon germanium cascadeable gain block Stanford Microdevices
132 SGA-3586 DC-5000 MHz, 3.5V, silicon germanium cascadeable gain block Stanford Microdevices
133 SGA-4563 DC-2500 MHz. 3.5V silicon germanium cascdeable gain block. Stanford Microdevices
134 SGA-4586 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz Stanford Microdevices
135 SGA-5263 DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz Stanford Microdevices
136 SGA-5286 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz Stanford Microdevices
137 SGA-5289 DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz Stanford Microdevices
138 SGA-5386 DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz Stanford Microdevices
139 SGA-5389 DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz Stanford Microdevices
140 SGA-5486 DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz Stanford Microdevices
141 SGA-5489 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz Stanford Microdevices
142 SGA-5586 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz Stanford Microdevices
143 SGA-5589 DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz Stanford Microdevices
144 SGA-6586 DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz Stanford Microdevices
145 SGA-6589 DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz Stanford Microdevices
146 SGA-7489 DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. Stanford Microdevices
147 THS9001 50-MHz to 350-MHz Cascadeable Amplifier Texas Instruments
148 THS9001DBVR 50-MHz to 350-MHz Cascadeable Amplifier Texas Instruments
149 THS9001DBVT 50-MHz to 350-MHz Cascadeable Amplifier Texas Instruments
150 VL1220 Coin type rechargeable lithium batteries (VL series) Panasonic


Datasheets found :: 155
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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