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Datasheets for ECTRIC C

Datasheets found :: 36826
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 BCR08AM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
122 BCR08AS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
123 BCR08AS-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
124 BCR10CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
125 BCR10CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
126 BCR10CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
127 BCR10CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
128 BCR10CS Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
129 BCR10PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
130 BCR10PM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
131 BCR10UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
132 BCR12 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
133 BCR12CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
134 BCR12CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
135 BCR12CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
136 BCR12CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
137 BCR12CS-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
138 BCR12CS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
139 BCR12KM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
140 BCR12PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
141 BCR12PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
142 BCR12PM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
143 BCR12PM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
144 BCR12PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
145 BCR12UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
146 BCR16A MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE Mitsubishi Electric Corporation
147 BCR16B MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE Mitsubishi Electric Corporation
148 BCR16C MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE Mitsubishi Electric Corporation
149 BCR16CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
150 BCR16CM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation


Datasheets found :: 36826
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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