No. |
Part Name |
Description |
Manufacturer |
121 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
122 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
123 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
124 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
125 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
126 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
127 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
128 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
129 |
2-BDY20 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
130 |
2-BDY38 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
131 |
2045A |
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES |
Texas Instruments |
132 |
2090 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
133 |
2090-6204-00 |
0.5-18 GHz, Two-way isolated power divider tapere, ultra broadband |
MA-Com |
134 |
2090-6204-00 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
135 |
2090-6205-00 |
2-18 GHz, Two-way isolated power divider tapere, ultra broadband |
MA-Com |
136 |
2090-6205-00 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
137 |
2090-6210-00 |
8-18 GHz, Two-way isolated power divider tapere, ultra broadband |
MA-Com |
138 |
2090-6210-00 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
139 |
2729-125 |
Pulsed Power S-Band (Si) |
Microsemi |
140 |
2729-170 |
Pulsed Power S-Band (Si) |
Microsemi |
141 |
2729-300P |
Pulsed Power S-Band (Si) |
Microsemi |
142 |
2731-100M |
Pulsed Power S-Band (Si) |
Microsemi |
143 |
2731-20 |
Pulsed Power S-Band (Si) |
Microsemi |
144 |
2731-200P |
Pulsed Power S-Band (Si) |
Microsemi |
145 |
2931-150 |
Pulsed Power S-Band (Si) |
Microsemi |
146 |
2N3054 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
147 |
2N3054A |
Leaded Power Transistor General Purpose |
Central Semiconductor |
148 |
2N3055 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
149 |
2N3055 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
150 |
2N3300 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
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