| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1515-70A |
Delay 70 +/-3.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 122 |
1515-70Y |
Delay 70 +/-3.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 123 |
1515-80A |
Delay 80 +/-4 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 124 |
1515-90A |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 125 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 126 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 127 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 128 |
1N3062 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 129 |
1N3063 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 130 |
1N3064 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 131 |
1N3070 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 132 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
| 133 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 134 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 135 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 136 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 137 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 138 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 139 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 140 |
1N3208R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 141 |
1N3209R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 142 |
1N3210R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 143 |
1N3212R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 144 |
1N3213R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 145 |
1N3595 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 146 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 147 |
1N3675 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 148 |
1N3675A |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 149 |
1N3675B |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 150 |
1N3676 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
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