| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AQY414EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 122 |
AQY414EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 123 |
BPX63 |
Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current |
Siemens |
| 124 |
CZ80PIO |
Hereinafter Referred to As PIO, is a Dual-Port Device |
etc |
| 125 |
DIODES INFORMATIONS |
Diodes informations from Einzelhalbleiter Industrie-Typen Datenbuch 1976-1977 |
Siemens |
| 126 |
EB4 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 127 |
EB6 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 128 |
EB7 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 129 |
EB7D |
Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Polarizing Key is Reinforced Nylon, Protected Entry |
Vishay |
| 130 |
EB7S |
Single Readout, Selective Gold Plating, Polarization Between Contact Positions, Polarizing Key is Reinforced Nylon, Protected Entry |
Vishay |
| 131 |
EB8 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
| 132 |
EBT156 |
Single Readout, Dip Solder, Eyelet and Wire Wrap Termination, Modified Tuning Fork Contacts, Polarization On or Between Contact Positions, Polarizing Key is Reinforced Nylon, Protected Entry |
Vishay |
| 133 |
EC10DA40 |
ELECTROSTATIC DISCHARGE REINFORCEMENT TYPE |
Nihon |
| 134 |
EIN10 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 135 |
EIN11 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 136 |
EIN12 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 137 |
EIN13 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 138 |
EIN14 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 139 |
EIN15 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 140 |
EIN16 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 141 |
EIN8 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 142 |
EIN9 |
E-Series RF Inductor 50 MHz |
Tyco Electronics |
| 143 |
EP05DA40 |
ELECTROSTATIC DISCHARGE REINFORCEMENT TYPE |
Nihon |
| 144 |
ISO5451 |
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125 |
Texas Instruments |
| 145 |
ISO5451DW |
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125 |
Texas Instruments |
| 146 |
ISO5451DWR |
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125 |
Texas Instruments |
| 147 |
ISO5851 |
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125 |
Texas Instruments |
| 148 |
ISO5851DW |
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125 |
Texas Instruments |
| 149 |
ISO5851DWR |
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40 to 125 |
Texas Instruments |
| 150 |
ISO5852S |
5.7 kVrms Split O/P, Reinforced Isolated IGBT Gate Driver 16-SOIC -40 to 125 |
Texas Instruments |
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