DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for EMIT

Datasheets found :: 4679
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 224ET-2 ET thermistor, 226KOhm SEMITEC
122 234ET-1 ET thermistor, 232KOhm SEMITEC
123 234ET-2 ET thermistor, 232KOhm SEMITEC
124 23A003 0.3 W, 15 V, 2300 MHz common emitter transistor GHz Technology
125 23A005 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
126 23A008 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
127 23A017 1.7 W, 20 V, 2300 MHz common emitter transistor GHz Technology
128 23A025 2.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
129 250D-5 D thermistor, 250Ohm SEMITEC
130 252CT-4 CT thermistor, 2.5KOhm SEMITEC
131 2N1025 Silicon Transistors Semitronics
132 2N1073 PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V Motorola
133 2N1073A PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V Motorola
134 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
135 2N158 Germanium Power Transistors Semitronics
136 2N1600 Silicon Controlled Rectifiers Semitronics
137 2N2079 Germanium Power Transistor Semitronics
138 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
139 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
140 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
141 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
142 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
143 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
144 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
145 2N4123 General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
146 2N4124 General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
147 2N4125 Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
148 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
149 2N4146 Thyristors and Triggers Semitronics
150 2N4400 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 4679
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



© 2024 - www Datasheet Catalog com