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Datasheets for ER F

Datasheets found :: 19126
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No. Part Name Description Manufacturer
121 1N5814 100 V, 20 A hyper fast recovery rectifier Solid State Devices Inc
122 1N5816 150 V, 20 A hyper fast recovery rectifier Solid State Devices Inc
123 1NU41 SUPER FAST RECOVERY RECTIFIER TOSHIBA
124 1R5DU41 SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
125 1R5GU41 DUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS TOSHIBA
126 1R5NU41 SUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS TOSHIBA
127 1S1837 Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) TOSHIBA
128 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
129 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
130 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
131 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
132 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
133 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
134 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
135 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
136 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
137 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
138 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
139 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
140 20N03HL HDTMOS E-FET High Density Power FET DPAK for Surface Mount Motorola
141 20RIF100W V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers International Rectifier
142 20RIF120W V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers International Rectifier
143 2N3866 40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note RCA Solid State
144 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
145 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
146 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
147 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
148 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
149 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
150 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State


Datasheets found :: 19126
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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