No. |
Part Name |
Description |
Manufacturer |
121 |
BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75 |
Infineon |
122 |
BFS 17P |
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz |
Infineon |
123 |
BFS17P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
124 |
BFS17S |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFS17W) for broadband amplifiers |
Infineon |
125 |
BFS17W . |
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz |
Infineon |
126 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
127 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
128 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
129 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
130 |
BFS460L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
131 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
132 |
BFS466L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
133 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
134 |
BFS469L6 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
135 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
136 |
BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers |
Infineon |
137 |
BFS481 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR181W) for low noise, high gain broadband amplifiers |
Infineon |
138 |
BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers |
Infineon |
139 |
BFT92 |
RF-Bipolar - PNP Silicon RF transistor for broadband amplifiers |
Infineon |
140 |
BGC420 |
Self-Biased BFP420 |
Infineon |
141 |
BSM100GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
142 |
BSM100GB120DN2K |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
143 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
144 |
BSM150GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
145 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
146 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
147 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
148 |
BSM200GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
149 |
BSM25GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
150 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
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