No. |
Part Name |
Description |
Manufacturer |
121 |
IRFF9222 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
122 |
IRFF9223 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
123 |
IRFF9230 |
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package |
International Rectifier |
124 |
IRFF9230 |
4.0A/ -200V/ 0.800 Ohm/ P-Channel Power MOSFET |
Intersil |
125 |
IRFF9230 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 4A |
Siliconix |
126 |
IRFF9231 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 4A |
Siliconix |
127 |
IRFF9232 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 3.5A |
Siliconix |
128 |
IRFF9233 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 3.5A |
Siliconix |
129 |
IRHF9230 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
International Rectifier |
130 |
KF924V |
900MHz Band Paging System |
Korea Electronics (KEC) |
131 |
KF927A |
900MHz Cordless Phone |
Korea Electronics (KEC) |
132 |
KF927AV |
900MHz Cordless Phone |
Korea Electronics (KEC) |
133 |
LF9231 |
TRANSFORMER MODULES |
Delta |
134 |
MRF9200LR3 |
N−Channel Enhancement−Mode Lateral MOSFETs |
Freescale (Motorola) |
135 |
MRF9200LR3 |
880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistor |
Motorola |
136 |
MRF9200LSR3 |
N−Channel Enhancement−Mode Lateral MOSFETs |
Freescale (Motorola) |
137 |
MRF9200LSR3 |
880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistor |
Motorola |
138 |
MRF9210 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET |
Motorola |
139 |
MRF9210 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET |
Motorola |
140 |
MRF9210R3 |
880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
141 |
MRF9210R3 |
RF Power Field Effect Transistor |
Motorola |
142 |
MRF927T1 |
LOW NOISE HIGH FREQUENCY TRANSISTOR |
Motorola |
143 |
MRF927T3 |
LOW NOISE HIGH FREQUENCY TRANSISTOR |
Motorola |
144 |
NX8562LF921-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1592.10 nm. Frequency 188.30 THz. Anode floating. FC-PC connector. |
NEC |
145 |
NX8562LF929-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1592.94 nm. Frequency 188.20 THz. Anode floating. FC-PC connector. |
NEC |
146 |
NX8563LF921-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1592.10 nm. Frequency 188.30 THz. FC-PC connector. Anode floating. |
NEC |
147 |
NX8563LF929-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1592.94 nm. Frequency 188.20 THz. FC-PC connector. Anode floating. |
NEC |
148 |
Q62701-F92 |
PNP GERMANIUM UHF TRANSISTOR |
Siemens |
149 |
SFF9240 |
P-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
150 |
SFF9244 |
P-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
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