| No. |
Part Name |
Description |
Manufacturer |
| 121 |
FD17D500E |
Magneto Resistor |
Siemens |
| 122 |
FFD10UP20S |
10A, 200V, Ultrafast Diode |
Fairchild Semiconductor |
| 123 |
HDSP-0881-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 124 |
HDSP-0882-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 125 |
HDSP-0883-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 126 |
HDSP-0884-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 127 |
HDSP-0981-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 128 |
HDSP-0982-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 129 |
HDSP-0983-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 130 |
HDSP-0984-FD100 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
| 131 |
IRFD110 |
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
| 132 |
IRFD110 |
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET |
Intersil |
| 133 |
IRFD110 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 1A |
Siliconix |
| 134 |
IRFD112 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
| 135 |
IRFD113 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
| 136 |
IRFD113 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 0.8A |
Siliconix |
| 137 |
IRFD120 |
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
| 138 |
IRFD120 |
1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET |
Intersil |
| 139 |
IRFD120 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 1.3A |
Siliconix |
| 140 |
IRFD123 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 1.1A |
Siliconix |
| 141 |
IRFD1Z0 |
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
Intersil |
| 142 |
IRFD1Z1 |
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs |
Intersil |
| 143 |
IRFD1Z2 |
0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 144 |
IRFD1Z3 |
0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 145 |
IRG4BC30FD1 |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode |
International Rectifier |
| 146 |
IRG4BC30FD1PBF |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode |
International Rectifier |
| 147 |
MAX6719UTSFD1+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 148 |
MAX6719UTSFD1+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 149 |
NFD15 |
PNPN Switch |
NEC |
| 150 |
RFD10P03 |
10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET |
Fairchild Semiconductor |
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