No. |
Part Name |
Description |
Manufacturer |
121 |
MAX6740XKVFD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
122 |
MAX6740XKVFD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
123 |
MAX6740XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
124 |
MAX6740XKYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
125 |
MAX6741XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
126 |
MAX6741XKSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
127 |
MAX6741XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
128 |
MAX6741XKYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
129 |
MAX6743XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
130 |
MAX6743XKSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
131 |
MAX6743XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
132 |
MAX6743XKYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
133 |
MAX6744XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
134 |
MAX6744XKSFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
135 |
MAX6744XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
136 |
MAX6744XKYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
137 |
MN101EFD3D |
MN101E Series embedded Panasonic core |
Panasonic |
138 |
MN101EFD3G |
MN101E Series embedded Panasonic core |
Panasonic |
139 |
MN103SFD3R |
32-bit High Performance Microcomputers MN103S Series |
Panasonic |
140 |
RFD3055 |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
141 |
RFD3055 |
12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs |
Intersil |
142 |
RFD3055LE |
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
Fairchild Semiconductor |
143 |
RFD3055LE |
11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
144 |
RFD3055LESM |
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
Fairchild Semiconductor |
145 |
RFD3055LESM |
11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
146 |
RFD3055LESM9A |
11A, 60V, 0.107 OHm, Logic Level, N-Channel Power MOSFETs |
Fairchild Semiconductor |
147 |
RFD3055SM |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
148 |
RFD3055SM |
12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs |
Intersil |
149 |
RFD3055SM9A |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
150 |
RFD3N08 |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
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