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Datasheets for FD3

Datasheets found :: 166
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
121 MAX6740XKVFD3+ Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
122 MAX6740XKVFD3+T Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits MAXIM - Dallas Semiconductor
123 MAX6740XKVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
124 MAX6740XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
125 MAX6741XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
126 MAX6741XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
127 MAX6741XKVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
128 MAX6741XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
129 MAX6743XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
130 MAX6743XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
131 MAX6743XKVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
132 MAX6743XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
133 MAX6744XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
134 MAX6744XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
135 MAX6744XKVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
136 MAX6744XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
137 MN101EFD3D MN101E Series embedded Panasonic core Panasonic
138 MN101EFD3G MN101E Series embedded Panasonic core Panasonic
139 MN103SFD3R 32-bit High Performance Microcomputers MN103S Series Panasonic
140 RFD3055 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
141 RFD3055 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs Intersil
142 RFD3055LE 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Fairchild Semiconductor
143 RFD3055LE 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil
144 RFD3055LESM 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Fairchild Semiconductor
145 RFD3055LESM 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil
146 RFD3055LESM9A 11A, 60V, 0.107 OHm, Logic Level, N-Channel Power MOSFETs Fairchild Semiconductor
147 RFD3055SM 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
148 RFD3055SM 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs Intersil
149 RFD3055SM9A 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Fairchild Semiconductor
150 RFD3N08 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil


Datasheets found :: 166
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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