| No. |
Part Name |
Description |
Manufacturer |
| 121 |
6G6A2 |
RECTIFIER STACK |
TOSHIBA |
| 122 |
6J2C2 |
RECTIFIER STACK |
TOSHIBA |
| 123 |
6J3A2 |
RECTIFIER STACK |
TOSHIBA |
| 124 |
6J4B2 |
RECTIFIER STACK |
TOSHIBA |
| 125 |
6J6A2 |
RECTIFIER STACK |
TOSHIBA |
| 126 |
6N2C2 |
RECTIFIER STACK |
TOSHIBA |
| 127 |
6N3A2 |
RECTIFIER STACK |
TOSHIBA |
| 128 |
6N4B2 |
RECTIFIER STACK |
TOSHIBA |
| 129 |
6N6A2 |
RECTIFIER STACK |
TOSHIBA |
| 130 |
AB-039 |
POWER AMPLIFIER STRESS AND POWER HANDLING LIMITATIONS |
Burr Brown |
| 131 |
AN-460 |
Using transient response to determine operational amplifier stability - Application Note |
Motorola |
| 132 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 133 |
BCP71 |
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
| 134 |
BCP71M |
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
| 135 |
BCP72M |
PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
| 136 |
BDY34 |
Silicon NPN epitaxial planar transistor for AF power stages, power amplifier stages and relaise-driver stages |
AEG-TELEFUNKEN |
| 137 |
BF198 |
NPN Silicon RF Transistor for variable-gain IF amplifier stages |
Siemens |
| 138 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 139 |
BF959 |
NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) |
Siemens |
| 140 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 141 |
BFG135A |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
| 142 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 143 |
BFG235 |
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
Siemens |
| 144 |
BFX60 |
NPN transistor for RF amplifier stages |
Siemens |
| 145 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 146 |
FP100F |
10000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 147 |
FP100S |
10000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 148 |
FP125F |
12500 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 149 |
FP125S |
12500 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 150 |
FP150F |
15000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| | | |
