No. |
Part Name |
Description |
Manufacturer |
121 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
122 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
123 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
124 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
125 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
126 |
2SC1380 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
127 |
2SC1380A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
128 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
129 |
2SC395 |
Silicon NPN epitaxial planar transistor (PCT Process) for industrial applications |
TOSHIBA |
130 |
2SC400 |
Silicon PNP Epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
131 |
2SC5549 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM |
TOSHIBA |
132 |
2SC5550 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM |
TOSHIBA |
133 |
2SC979 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
134 |
2SC979A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
135 |
2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive |
TOSHIBA |
136 |
2SK11 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
137 |
2SK112 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
138 |
2SK113 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
139 |
2SK12 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
140 |
2SK15 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
141 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
142 |
2SK48 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
143 |
2SK612 |
V(dss): 100V; 20W; fast switching N-channel silicon power MOS FET. For industrial use |
NEC |
144 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
145 |
40553 |
5A 200V All-Diffused Silicon Controlled Rectifier for Inverter Applications |
RCA Solid State |
146 |
40554 |
5A 400V All-Diffused Silicon Controlled Rectifier for Inverter Applications |
RCA Solid State |
147 |
40555 |
5A 600V All-Diffused Silicon Controlled Rectifier for Inverter Applications |
RCA Solid State |
148 |
40RIF100W |
V(rrm): 1000V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
149 |
40RIF120W |
V(rrm): 1200V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
150 |
50RIF100W |
V(rrm): 1000V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
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