| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BBY25-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 122 |
BBY26 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 123 |
BBY26-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 124 |
BBY27 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 125 |
BBY27-S2 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 126 |
BBY32CB |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 127 |
BBY32DA |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 128 |
BBY32DB |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 129 |
BBY32EA |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 130 |
BBY32FA |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 131 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 132 |
BBY33BB-2 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
| 133 |
BBY33DA-2 |
Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) |
Siemens |
| 134 |
BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 135 |
BBY34D |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 136 |
BBY35F |
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) |
Siemens |
| 137 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 138 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 139 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 140 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 141 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 142 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 143 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 144 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 145 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 146 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 147 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 148 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 149 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 150 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
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