| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 122 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 123 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 124 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 125 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 126 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 127 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 128 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 129 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 130 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 131 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 132 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 133 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 134 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 135 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 136 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 137 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 138 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 139 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 140 |
BFY65 |
Silicon NPN Planar Transistor with high blocking voltage, especially for controlling number display tubes |
TELEFUNKEN |
| 141 |
BU111 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
| 142 |
BU114 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
| 143 |
BZY85 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 144 |
BZY85B |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 145 |
BZY85B10 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 146 |
BZY85B11 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 147 |
BZY85B12 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 148 |
BZY85B13 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 149 |
BZY85B15 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 150 |
BZY85B16 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
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